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首页> 外文期刊>Journal of the European Ceramic Society >3 with 50wt% of B2O3-Bi2O3-SiO2-ZnO glass]]>
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3 with 50wt% of B2O3-Bi2O3-SiO2-ZnO glass]]>

机译:<![CDATA [BATIO的CDATA行为和特征研究 3 50 WT%B 2 O 3 - EC:INF PLACE =“POST”> 2 O < CE:INF PLACE =“POST”> 3 -SIO 2 -ZNO玻璃]]>

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摘要

The thermal analysis of B203-Bi203-Si02-ZnO (BBSZ) glass with different particle sizes and LiF addition was researched to study its temperature behavior. Next the composites with 50wt% BaTiO3-50wt% BBSZ glass were prepared for shrinkage, microstructures and dielectric properties investigations. The differently treated BBSZ glass showed that the smaller glass particles clearly decreased its softening and crystallization temperatures. LiF addition had the same but much weaker effect.The composites showed two-stage shrinkage related to the softening of the glass and new phase gen-eration of Bi24Si204o at 385-450 °C, and Bi4BaTi40i5 over 680 °C. The microstructures of the composites sintered at 720°C showed Bi4BaTi40i5, BaTiO_3 and Bi24Si2O40 with residual ZnO phase. LiF addition increased the amount of Bi4BaTi4015> thus increasing the loss value. However the particle size of the glass did not effect to the dielectric properties of the composites showing permittivity of 248-256 and loss of 0.013atl00kHz.
机译:研究了具有不同颗粒尺寸和LIF加入的B203-BI203-SiO 2-ZnO(BBSZ)玻璃的热分析,研究其温度行为。接下来,制备具有50wt%BATIO3-50wt%BBSZ玻璃的复合材料,用于收缩,微观结构和电介质性质研究。不同处理的BBSZ玻璃表明,较小的玻璃颗粒显然降低了其软化和结晶温度。生命添加具有相同但较弱的效果。复合材料显示出与玻璃软化有关的两级收缩,Bi24Si204O在385-450℃下的新阶段Gen-utation,Bi4bati40i5超过680℃。在720℃下烧结的复合材料的微观结构显示Bi4bati40i5,BATIO_3和BI24SI2O40,残留ZnO相。 LIF添加增加了BI4BATI4015>因此增加了损耗值。然而,玻璃的粒度对复合材料的介电性质没有影响,显示出248-256的介电常数和0.013Atl00kHz的损失。

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    Microelectronics Research Unit Faculty of Information Technology and Electrical Engineering P.O. Box 4500 FI-90014 University of Oulu Finland;

    Microelectronics Research Unit Faculty of Information Technology and Electrical Engineering P.O. Box 4500 FI-90014 University of Oulu Finland;

    Department of Material Science and Engineering National United University Miao-Li 36003 Taiwan;

    Microelectronics Research Unit Faculty of Information Technology and Electrical Engineering P.O. Box 4500 FI-90014 University of Oulu Finland;

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