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Analytical Model for Collector Current Gummel Plots of Heterojunction Bipolar Transistors

机译：杂交双极晶体管集电器电流凝胶图的分析模型

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The work develops an analytical model for HBT's Gummel plots, based on thermionic ?? field ?? emission theory. This new model is easier to apply for usual HBT's Gummel characterization. Its validity was demonstrated by analysis of the experimental results of silicon nitride passivated InP/InGaAs heterojunction bipolar transistors.

机译：该工作基于热离子造型，为HBT的凝胶图进行了分析模型场地？？排放理论。这一新模型更容易应用于通常的HBT的GBT的旋转特征。通过分析氮化硅钝化InP / Ingaas异质结双极晶体管的实验结果来证明其有效性。

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《Spanish Conference on ELectron Devices》|2009年||共4页
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Sachelarie Dan; Predusca Gabriel;
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中图分类 TN6-53;
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1. An analytical study of current-voltage characteristics and breakdown performance of GaInP/GaAs composite collector double heterojunction bipolar transistor [J] . Y. L. Goh, D. S. Ong, H. K. Yow Journal of Applied Physics . 2004,第8期

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2. Gummel-Poon model for single and double heterojunction bipolar transistors [J] . Huang C.N., Abdel-Motaleb I.M. IEE Proceedings. Part G, Circuits, Devices and Systems . 1991,第2期

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3. Verification of theoretical model for collector current in SiGe-based heterojunction bipolar transistors [J] . Electronics Letters . 2013,第21期

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4. Analytical Model for Collector Current Gummel Plots of Heterojunction Bipolar Transistors [C] . Sachelarie Dan, Predusca Gabriel Spanish Conference on ELectron Devices . 2009

机译：杂交双极晶体管集电器电流凝胶图的分析模型
5. Reduction of base-collector capacitance in gallium arsenide/aluminum gallium arsenide heterojunction bipolar transistors by ion implantation and MOCVD regrowth [D] . Chang, Ping-Chih 1997

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Analytical Model for Collector Current Gummel Plots of Heterojunction Bipolar Transistors

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