Verification of theoretical model for collector current in SiGe-based heterojunction bipolar transistors

摘要

The theoretical collector current model for SiGe-based heterojunction bipolar transistors under parallel-perpendicular kinetic energy coupling and anisotropic masses was validated. Verification was performed by comparison to Monte Carlo (MC) calculations and experimental data obtained from previous publications. Collector current against base-emitter voltage obtained by the present model is comparable to that calculated by the MC method. The measured collector currents as a function of base-collector voltage agreed well with the calculated currents for base-emitter voltages ranging from 0.3 to 0.6 V.