Current drive in n-type Schottky Barrier MOSFETs: a Monte Carlo study

摘要

In this paper we present a Monte Carlo study of the static performance of Schottky barrier (SB) SOI MOSFETs. A 2D Ensemble Monte Carlo (EMC) simulator including tunnelling transport at the Schottky interfaces has been used. Quantum transmission coefficients and treatment of image charge effects on the Schottky barrier have been carefully considered. The physical principles of operation of SB-MOSFETs have been studied as well as the transition of the device from triode to saturation regime by means of the study of the internal quantities provided by the our simulator, such as the potential, carrier density and average carrier velocity.