High Heat Dissipation Package Structure of Nitride-based Semiconductor Green Light Emitting Diodes

摘要

The thermal management has become increasingly important when comes to device applications using high power light emitting diodes (LEDs). To thermally manage the devices in a most effective fashion, we report a novel packaging technique in which a copper electroplating process is directly applied over the green LED chips. With the copper-encapsulated layer, the maximum injection current subsequently administered to these LED chips can be increased easily from a conventional 900 mA to more than 1050 mA at room temperature. It was found that the luminous intensity at 350 and 900 mA of the novel package LEDs showed 69% and 84% enhancement as compared with that of the conventional package ones. In this paper, the electrical and optical characteristics of GaN-based green LEDs with direct copper plating were discussed.