Electrical and Optical Properties of a IV-VI Semiconductor Structure on Silicon

机译：硅IV-VI半导体结构的电气和光学性质

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

Recent optical characterization results obtained from a IV-VI semiconductor structure containing a 30 nm PbSe multiple quantum well (MQW) active region sandwiched between PbSrSe/BaF₂ top and bottom distributed Bragg reflectors (DBRs) on silicon are described

机译：最近从包含30nm Pbse多量子阱（MQW）的IV-VI半导体结构获得的光学表征结果，夹在硅上的PBSRSE / BAF _{2 顶部和底部分布式布拉格反射器（DBRS）之间夹在PBSRSE / BAF _{Top和底部分布式布拉格反射器（DBRS）之间是描述}}

著录项

来源
《Annual Meeting of the Institute of Electrical and Electronics Engineers Lasers and Electro-Optics Society》|2006年||共2页
会议地点
作者

展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类光电子技术、激光技术;
关键词
IV-VI semiconductors; barium compounds; distributed Bragg reflectors; electrical conductivity transitions; lead compounds; optical materials; photoluminescence; semiconductor quantum wells; strontium compounds; DBR; IV-VI semiconductor structure; PbSe; PbSrSe-BaFlt; subgt; 2lt; /subgt; Si; electrical properties; intersubband electronic transitions; multiple quantum well active region; optical properties;

机译：IV-VI半导体;钡化合物;分布式布拉格反射器;导电性转变;铅化合物;光学材料;光致发光;半导体量子阱;锶化合物;DBR;IV-VI半导体结构;PBSE;PBSRSE-BAF＆LT;2＆lt;2 / Sub＆gt;Si;电学特性;相交的电子转换;多量子阱有源区;光学性质;

相似文献

外文文献
中文文献
专利

1. From one-dimensional organosilicon structures to polymeric semiconductors: optical and electrical properties [J] . Nespurek S. Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2002,第Pta2期

机译：从一维有机硅结构到高分子半导体：光学和电学性质
2. Structures for organic diode lasers and optical properties of organic semiconductors under intense optical and electrical excitations [J] . Kozlov V.G., Parthasarathy G. IEEE Journal of Quantum Electronics . 2000,第1期

机译：强光和电激发下有机二极管激光器的结构和有机半导体的光学特性
3. Structures for organic diode lasers and optical properties oforganic semiconductors under intense optical and electrical excitations [J] . Kozlov V.G., Parthasarathy G., Burrows P.E., IEEE Journal of Quantum Electronics . 2000,第1期

机译：强光和电激发下有机二极管激光器的结构和有机半导体的光学特性
4. Electrical and Optical Properties of a IV-VI Semiconductor Structure on Silicon [C] . L. A. Elizondo, P. J. McCann, F. Zhao, IEEE LEOS Annual Meeting Conference . 2006

机译：硅IV-VI半导体结构的电气和光学特性
5. Controlled growth of semiconductor nanostructures and their optical and electrical properties [D] . Yan, Haoquan. 2005

机译：半导体纳米结构的受控生长及其光学和电学性质
6. Modification of optical and electrical properties of zinc oxide-coated porous silicon nanostructures induced by swift heavy ion [O] . Yogesh Kumar, Manuel Herrera-Zaldivar, Sion Federico Olive-Méndez, 2012

机译：快速重离子诱导的氧化锌包覆多孔硅纳米结构光学和电学性质的改性
7. Electronic structure, structural properties, and dielectric functions of IV-VI semiconductors: PbSe and PbTe [O] . E. A. Albanesi, C. M. I. Okoye, C. O. Rodriguez, 2000

机译：IV-VI半导体的电子结构，结构性和介质功能：PBSE和PBTE
8. Influence of Electronic Structure on the Magnetic Properties of IV-VI diluted Magnetic Semiconductors [R] . Gorska, M. 2001

机译：电子结构对IV-VI稀磁半导体磁性能的影响

Electrical and Optical Properties of a IV-VI Semiconductor Structure on Silicon

摘要

著录项

相似文献

相关主题

期刊订阅