CH{sub}4/H{sub}2-RIE Induced Optical Property Degradation in GaInAsP/InP Quantum-Well Structures

机译：CH {sub} 4 / h {sub} 2-RIE诱导的GAISAPP / INP量子井结构中的光学性质劣化

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

The origin and model of RIE-plasma induced optical property degradation of GaInAsP/InP quantum-well structures were investigated. Non-radiative recombination was enhanced by irradiating H{sub}2-plasma, and was found to be recovered during high temperature annealing by OMVPE.

机译：研究了RIE-等离子体诱导光学性质降解增益/ INP量子阱结构的起源和模型。通过照射H {亚} 2 - 血浆来增强非辐射重组，并发现在OMVPE的高温退火期间被回收。

著录项

来源
《International Nano-Optoelectronics Workshop》|2008年||共2页
会议地点
作者
Munetaka Kurokawa; Dhanorm Plumwonrot; Takeo Maruyama; Nobuhiko Nishiyama; Shigehisa Arai;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类 TP241-53;
关键词

相似文献

外文文献
中文文献
专利

1. Saturation characteristics of Ga/sub 0.68/In/sub 0.32/As/GaInAsP/InP tensile-strained quantum-well semiconductor laser amplifiers with tapered-waveguide structures [J] . Huang Y., Komori K. IEEE Journal of Quantum Electronics . 1994,第9期

机译：具有锥形波导结构的Ga / sub 0.68 / In / sub 0.32 / As / GaInAsP / InP拉伸应变量子阱半导体激光放大器的饱和特性
2. Operational wavelength range of GaInAs(P)-InP intersectional optical switches using field-induced electrooptic effect in low-dimensional quantum-well structures [J] . Shimomura K., Arai S. IEEE Journal of Quantum Electronics . 1992,第2期

机译：GaInAs（P）-InP交叉光开关在低维量子阱结构中利用场致电光效应的工作波长范围
3. Determination of carrier-induced optical index and loss variations in GaInAsP/InP heterostructures from static and dynamic Mach-Zehnder interferometer measurements [J] . M. Zegaoui, I Harari, J.P. Vilcot, Electronics Letters . 2004,第16期

机译：通过静态和动态Mach-Zehnder干涉仪测量确定载流子诱导的光学指数和GaInAsP / InP异质结构的损耗变化
4. CH{sub}4/H{sub}2-RIE Induced Optical Property Degradation in GaInAsP/InP Quantum-Well Structures [C] . Munetaka Kurokawa, Dhanorm Plumwonrot, Takeo Maruyama, International Nano-Optoelectronics Workshop . 2008

机译：CH {sub} 4 / h {sub} 2-RIE诱导的GAISAPP / INP量子井结构中的光学性质劣化
5. Optically induced phenomena in gallium arsenide/aluminum gallium arsenide quantum-well structures. [D] . Yeo, Teaman. 2001

机译：砷化镓/砷化镓铝量子阱结构中的光诱导现象。
6. The Photocatalytic Application of Semiconductor Stibnite Nanostructure Synthesized via a Simple Microwave-Assisted Approach in Propylene Glycol for Degradation of Dye Pollutants and its Optical Property [O] . Eksuree Saksornchai, Jutarat Kavinchan, Somchai Thongtem, 2017

机译：通过简单的微波辅助方法合成的半导体辉石纳米结构在丙二醇中降解染料的光学性能及其光学性质
7. The Photocatalytic Application of Semiconductor Stibnite Nanostructure Synthesized via a Simple Microwave-Assisted Approach in Propylene Glycol for Degradation of Dye Pollutants and its Optical Property [O] . Eksuree Saksornchai, Jutarat Kavinchan, Somchai Thongtem, 2017

机译：半导体Stibnite纳米结构的光催化施加通过简单的微波辅助方法在丙二醇中合成，以降解染料污染物及其光学性质
8. Optical Properties of Proton Bombarded InP and GaInAsP [R] . Leonberger, F. J., Walpole, J. N., Donnelly, J. P. 1981

机译：质子轰击Inp和GaInasp的光学性质

CH{sub}4/H{sub}2-RIE Induced Optical Property Degradation in GaInAsP/InP Quantum-Well Structures

摘要

著录项

相似文献

相关主题

期刊订阅