Determination of carrier-induced optical index and loss variations in GaInAsP/InP heterostructures from static and dynamic Mach-Zehnder interferometer measurements

摘要

Mach-Zehnder type interferometer measurements are used to determine the variation of the optical index and propagation loss. Devices are fabricated in InGaAsP/InP material line and experiments are performed at 1.3 and 1.55 μm wavelength. Combining static and dynamic measurements, the carrier life-time, the effective index and loss variation against injected current and carrier density were determined.