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Two-component nanopillar arrays grown by Glancing Angle Deposition

机译:通过瞥见角度沉积而生长的双组分纳米玻璃阵列

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Periodic arrays of 160- to 500-nm-wide Si and Cr nanostructures were grown on patterned Si(001) substrates by Glancing Angle Deposition (GLAD). Initial patterning was achieved by colloidal self-assembly of 500-nm-diameter polystyrene and 160-nm-diameter silica microspheres which form, during drying from suspension, close-packed hexagonal arrays. Si deposition onto a monolayer of 500-nmdiameter spheres from an angle a, with respect to the surface normal, of 72-, yields a regular array of 2-Am-tall and 450-nm-wide nanopillars. Regular arrays of 300-nm-wide Cr nano-half-moon structures are obtained with a =86-.^sCr–Si two-component multi-stack nanopillars were grown on 160-nm-diameter nanospheres by successive Cr and Si deposition sequences with continuous rotation of the substrate about the polar axis. The resulting 300-nm-tall pillars have a large distribution in width, ranging from 120 to 170 nm, show height variations, and some randomness in arrangement. This is in strong contrast to nanostructures on 500-nm spheres which perfectly replicate the underlying microsphere array. The transition to a less ordered morphology is attributed to a competitive growth mode which becomes dominant when the pattern period is smaller than the length scales of surface diffusion and column self-shadowing. That is, in the case of 160-nm patterns, competition between neighboring columns causes exacerbated growth of some columns at the cost of others which die out. This competition is delayed for growth on 500-nm-diameter spheres, yielding regular nanostructure arrays.
机译:通过瞥见角度沉积(高兴)在图案化的Si(001)衬底上生长了160至500nm宽的Si和Cr纳米结构的周期性阵列。通过500nm径直径的聚苯乙烯和160nm - 直径的二氧化硅微球的胶体自组装来实现初始图案化,其在悬浮液中干燥期间,封闭六方阵列。 Si沉积到500-nmdiameter球体的单层,相对于表面正常的角度A,为72-,产生常规的2-am高达450nm宽的纳米粒子阵列。用A = 86 - 。通过连续的Cr和Si沉积序列获得300nm宽Cr纳米半月结构的常规阵列300nm宽的Cr纳米半月结构。围绕极轴线连续旋转基板。由此产生的300 nm高柱的宽度具有大的分布,范围为120至170nm,显示高度变化,以及布置的一些随机性。这与500纳米球上的纳米结构形成强烈对比,这完全复制了底层的微球阵列。转换到较少订购的形态归因于竞争性的生长模式,当图案周期小于表面扩散和柱自阴影的长度尺度时变得优势。也就是说,在160nm模式的情况下,邻近柱之间的竞争导致一些柱的成本加剧了一些柱的增长。该竞争延迟了500纳米直径的球体的生长,呈常规纳米结构阵列。

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