Epitaxial thin film silicon solar cell technology, consisting of a thin high quality epitaxial stack on top of a non-active highly doped low-cost silicon substrate, is one of the most promising midterm alternatives for cost effective industrial solar cell manufacturing. In this work, chemical vapor deposition (CVD) is used as a deposition technique for a complete solar cell structure including a BSF, base and emitter. CVD, compared to other techniques, allows the growth of almost any doping profile designed as desired to optimize the emitter and base properties. In this paper, three different solar cell concepts will be discussed and analyzed. Each of them integrates a CVD grown emitter in a cell structure with advanced light trapping schemes formed by a porous silicon reflector at the epi-substrate interface and a textured front surface. Cell results up to 16.9% are obtained for a rear emitter concept with a 25μm thick, n-doped active base.
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