Effect of Low Temperature Annealing Prior to Non-melt Laser Annealing in Ultra-shallow Junction Formation

摘要

Non-melt laser annealing has been investigated intensively to form ultra-shallow junction. Particularly, effect of low temperature annealing prior to non-melt laser annealing was studied. It is found that the leakage current under reverse bias of p+/n diodes was decreased by about two orders of magnitude in low temperature pre-annealing / laser annealing sample as compared with that of laser annealing sample. Improvement of crystallinity of implanted layer was also confirmed from cross sectional transmission electron microscopy in low temperature pre-annealing / laser annealing sample.