Highly Active Junctions Formed in Crystalline Silicon by Infrared Laser Annealing

机译：通过红外激光退火形成在晶体硅中形成的高度有源结

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We investigated the activation of B in Si by a millisecond annealing process performed by infrared laser annealing. Reference samples were annealed in a lamp based rapid thermal annealing system at 200degC/s. We found that comparable diffusion length (~25

机译：我们通过红外激光退火进行的毫秒退火过程研究了SI中的B中的B.在200degc / s的基于灯的快速热退火系统中，在基于灯的快速热退火系统中退火。我们发现可比扩散长度（〜25

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《International Conference on Advanced Thermal Processing of Semiconductors》|2007年||共3页
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Mannino G.; La Magna A.; Privitera V.; Christensen J.S.; Vines L.; Svensson B.G.;
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中图分类 TN305-53;
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boron; diffusion; interstitials; laser beam annealing; rapid thermal annealing; silicon; B; B; Si; Si; boron interstitial; clusters formation; crystalline silicon; diffusion length; highly active junctions; infrared laser annealing; millisecond annea; Element; Element;

机译：硼;扩散;间隙;激光束退火;快速热退火;硅;b;b;si;si;硼蓝色;簇形成;晶体硅;扩散长度;强硬的结;毫秒激光退火;毫秒内的内部;元素;元素;元素;元素;元素;元素;元素;元素;元素;元素;元素;元素;元素;元素;元素;元素;元素;元素;元素;元素;元素;元素;元素;元素;元素;元素;

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Highly Active Junctions Formed in Crystalline Silicon by Infrared Laser Annealing

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