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Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on

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1.15

机译：15
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》 | 2007年
2.Temperature Dependent Reaction of Thin Ni-Silicide Transrotational Layers on 001Si

机译：001 Si上硅化镍薄旋转层的温度依赖性反应
- 作者：Alberti;A.;Bongiorno;C.;Alippi;P.;La Magna;A.;Spinella;C.;Rimini;E.
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》 | 2007年
3.Highly Active Junctions Formed in Crystalline Silicon by Infrared Laser Annealing

机译：红外激光退火在晶体硅中形成的高活性结
- 作者：Mannino;G.;La Magna;A.;Privitera;V.;Christensen;J.S.;Vines;L.;Svensson;B.G.
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》 | 2007年
- boron;
- diffusion;
- interstitials;
- laser beam annealing;
- rapid thermal annealing;
- silicon;
- B;
- B - Element;
- Si;
- Si - Element;
- boron interstitial;
- clusters formation;
- crystalline silicon;
- diffusion length;
- highly active junctions;
- infrared laser annealing;
- millisecond annea;
4.Laser annealing of a-Si for realization of polycrystalline Si film on plastic substrate

机译：激光退火a-Si以在塑料基板上实现多晶硅膜
- 作者：Mangano;F.;Caristia;L.;Costa;N.;Camalleri;M.;Ravesi;S.;Scalese;S.;Bagiante;S.;Privitera;V.
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》 | 2007年
5.Thermal Stability of Pt and C-Doped NiSi Films

机译：Pt和C掺杂NiSi薄膜的热稳定性
- 作者：Machkaoutsan;V.;Pages;X.;Bauer;M.;Thomas;S.;Mertens;S.;Verheyden;K.;Vanormelingen;K.;Granneman;E.
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》 | 2007年
6.New Approaches to Ultra Shallow Junction Formation by Molecular Implantation and Millisecond Laser Spike Annealing

机译：分子注入和毫秒激光尖峰退火形成超浅结的新方法
- 作者：Variam;N.;Kontos;A.;Arevalo;E.;Hatem;C.;Shaoyin Chen;Yun Wang
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》 | 2007年
7.Highly Reliable Rapid Thermal Selective Gate Re-Oxidation Process of Advanced Metal Gate Stacks with Tungsten Electrode

机译：先进的钨电极金属栅堆叠的高可靠性快速热选择性栅再氧化工艺
- 作者：Niess;J.;Kirchner;C.;Dietl;W.;Meyer;H.-J.;Nadig;B.;Lerch;W.
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》 | 2007年
8.First Quantitative Observation of Local Temperature Fluctuation in Millisecond Annealing

机译：毫秒退火中局部温度波动的首次定量观察
- 作者：Kubo;T.;Sukegawa;T.;Takii;E.;Yamamoto;T.;Satoh;S.;Kase;M.
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》 | 2007年
9.High-Activation Laser Anneal Process for the 45nm CMOS Technology Platform

机译：适用于45nm CMOS技术平台的高激活激光退火工艺
- 作者：Bidaud;M.;Bono;H.;Chaton;C.;Dumont;B.;Huard;V.;Morin;P.;Proencamota;L.;Ranica;R.;Ribes;G.
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》 | 2007年
10.Characteristics of Silicon Oxide Gate MOS Capacitors Formed by Rapid Thermal Oxidation and Annealing

机译：快速热氧化和退火形成的氧化硅栅极MOS电容器的特性
- 作者：Cavarsan;F.A.;Toma;A.;Fo;J.G.;Diniz;J.A.;Doi;I.
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》 | 2007年
11.Implants of ClusterBoron庐 and ClusterCarbon驴 materials for USJ applications - a study with various anneal techniques

机译：用于USJ应用的ClusterBoron®和ClusterCarbon驴材料的植入物-各种退火技术的研究
- 作者：Sekar;K.;Krull;W.;Horsky;T.;Chan;J.;McCoy;S.;Gelpey;J.
- 会议名称：《》 | 2007年
12.Nodal and Spatial Analysis for a Compact Thermal Modeling Methodology

机译：紧凑热建模方法的节点和空间分析
- 作者：Krishnamoorthy;S.;Chowdhury;M.H.
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》 | 2007年
13.Selective Rapid Thermal Oxidation of Silicon vs. Tungsten using Oxygen in Hydrogen

机译：使用氢气中的氧气对钨和钨进行选择性快速热氧化
- 作者：Ripley;M.;Balasubramanian;R.;Tam;N.;Yokota;Y.;An Bae Lee;Tae Jung Kim;Chung Hun Lee
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》 | 2007年
- oxidation;
- reflectivity;
- silicon compounds;
- transmission electron microscopy;
- tungsten;
- RadOxtrade solution;
- Si;
- Si - Surface;
- SiO;
- SiO;
- - Binary;
- TEM observations;
- W;
- W - Element;
- applied materials radiancetrade chamber;
- hydrogen gas;
- oxygen gas;
14.Laser Annealing of Power Devices

机译：功率器件的激光退火
- 作者：Friedrich;D.;Bernt;H.;Hanssen;H.;Oesterlin;P.;Schmidt;H.
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》 | 2007年
15.Pattern-Dependent Heating of 3D Structures

机译：3D结构的图案相关加热
- 作者：Granneman;E.;Pages;X.;Terhorst;H.;Verheyden;K.;Vanormelingen;K.;Rosseel;E.
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》 | 2007年
16.Thermal Processing with Maximized Simplicity and Energy Efficiency

机译：具有最大程度的简便性和能源效率的热处理
- 作者：Malik;I.J.;Ouaknine;M.;Fukada;T.;Woo Sik Yoo
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》 | 2007年
17.32nm Node USJ Implant 6; Annealing Options

机译：32nm Node USJ植入物6;退火选项
- 作者：Borland;J.O.
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》 | 2007年
- annealing;
- antimony;
- arsenic;
- boron compounds;
- elemental semiconductors;
- ion implantation;
- phosphorus;
- silicon;
- stress relaxation;
- HALO implantation;
- Jk:As;
- Jk:B;
- H;
- Jk:P;
- Jk:Sb;
- SDE implantation;
- SPE diffusion-less annea;
18.Impact of sub-melt laser annealing on Si

机译：亚熔体激光退火对硅的影响
- 作者：Rosseel;E.;Lu;J.P.;Hikavyy;A.;Verheyen;P.;Hoffmann;T.;Richard;O.;Geypen;J.;Bender;H.;Loo;R.;Absil;P.;McIntosh;R.;Felch;S.B.;Schreutelkamp;R.
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》 | 2007年
- Ge-Si alloys;
- MOSFET;
- annealing;
- laser materials processing;
- semiconductor materials;
- thermal stresses;
- PFET transistor;
- Si;
- Si - Surface;
- Si;
- Ge;
- -Si - Interface;
- SiGe-Si;
- defect density;
- laser annealing;
- leakage current;
- source-drain defectivit;
19.Review on Process-Induced Strain Techniques for Advanced Logic Technologies

机译：先进逻辑技术的过程应变技术综述
- 作者：Wiatr;M.;Feudel;T.;Wei;A.;Mowry;A.;Boschke;R.;Javorka;P.;Gehring;A.;Kammler;T.;Lenski;M.;Frohberg;K.;Richter;R.;Horstmann;M.;Greenlaw;D.
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》 | 2007年
20.Wafer Level Curing of Polymer Dielectrics with Variable Frequency Microwaves

机译：可变频率微波固化高分子电介质的晶圆级固化
- 作者：Hubbard;R.L.;Garard;R.S.
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》 | 2007年
- adhesion;
- brittleness;
- cracks;
- curing;
- dielectric thin films;
- elongation;
- interface phenomena;
- photoresists;
- polymer films;
- shrinkage;
- brittleness;
- cured film properties;
- dielectric films;
- elongation;
- epoxy-based films;
- film cracking;
- interfacial adhesion;
- photoresists;
- p;
21.Lasers Solutions for Annealing

机译：退火激光解决方案
- 作者：Turk Brandon;Paetzel Rainer;Brune Jan;Govorkov Sergei;Simon Frank
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》
22.Millisecond processing beyond chip technology: From electronics to photonics

机译：超越芯片技术的毫秒级处理：从电子到光子学
- 作者：Skorupa W.;Anwand W.;Posselt M.;Prucnal S.;Rebohle L.;Voelskow M.;Zhou S.;McMahon R. A.;Smith M.;Gebel T.;Hentsch W.;Fendler R.;Luthge T.;Satta A.;Borseth T. Moe;Kuznetsov A. Yu.;Svensson B.G.
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》
23.Low Temperature Thin Film Transistor Technologies

机译：低温薄膜晶体管技术
- 作者：Fruehauf Norbert
- 会议名称：《》
24.Aiming for the Best Matching Between Ultra-Shallow Doping and Milli-To Femto-Second Activation

机译：争取在超浅掺杂和毫微微微微秒级激活之间实现最佳匹配
- 作者：Mizuno Bunji;Sasaki Yuichiro
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》
25.Effects of thermal annealing in ion-implanted Gallium Nitride

机译：离子注入氮化镓中热退火的影响
- 作者：Iucolano F.;Giannazzo F.;Roccaforte F.;Puglisi V.;Grimaldi M. G.;Raineri V.
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》
26.Effect of Thermal Annealing on the Electrically Active Profiles and Surface Roughness in Multiple Al Implanted 4H-SiC

机译：热退火对多次铝注入4H-SiC电活性轮廓和表面粗糙度的影响
- 作者：Giannazzo F.;Roccaforte F.;Raineri V.;Salinas D.
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》
27.Widening of FUSI RTP Process Window by Spike Anneal

机译：Spike退火扩大了FUSI RTP工艺窗口
- 作者：Lauwers A.;Mertens S.;Absil P.;Chiarella T.;Hoffmann T.;Kubicek S.;de Marneffe J.F.;Brijs B.;Vrancken C.;Biesemans S.;Kittl J.;Verheyden K.;Vanormelingen K.;Granneman E.
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》
28.Virtual Metrology in RTP with WISR

机译：使用WISR的RTP中的虚拟计量
- 作者：Aderhold Wolfgang;Iliopoulos Ilias;Hunter Aaron
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》
29.Silicon Laser Annealing by a Two-Pulse Laser System with Variable Pulse Offsets

机译：通过具有可变脉冲偏移的两脉冲激光系统进行硅激光退火
- 作者：Gonda V.;Slabbekoorn J.;Nanver L.K.
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》
30.Excimer Laser Annealing for Low-Temperature Polysilicon Thin Film Transistor Fabrication on Plastic Substrates

机译：准分子激光退火技术在塑料基板上制备低温多晶硅薄膜晶体管
- 作者：Fortunato G.;Pecora A.;Maiolo L.;Cuscuna M.;Simeone D.;Minotti A.;Mariucci L.
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》
31.New Tool and New Process for Ultra High Performance for Metal/High-K Gate Dielectric Stack for Sub-45 nm CMOS Manufacturing

机译：超高性能的新工具和新工艺，用于低于45 nm CMOS制造的金属/高K栅介质堆叠
- 作者：Venkateshan A.;Singh R.;Poole K.F.
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》
32.Sacrificial Deuterium Passivation for Improved Interface Engineering in Gate Stack Processing

机译：牺牲氘钝化以改进门叠层处理中的接口工程
- 作者：Pap Andrea Edit;Battistig Gabor;Ducso Csaba;Barsony Istvan;Kamaras Katalin;Nenyei Zsolt;Dietl Waltraud;Kirchner Christoph
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》
33.Bi-Directional Reflectivity of Surfaces with Anisotropic Roughness on the Wafer Backside

机译：晶圆背面具有各向异性粗糙度的表面的双向反射率
- 作者：Hsu Pei-feng;Buchanan Robert R.
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》
34.Boron pile-up phenomena during ultra shallow junction formation

机译：超浅结形成过程中的硼堆积现象
- 作者：Ferri M.;Solmi S.;Giubertoni D.;Bersani M.;Hamilton J. J.;Kah M.;Cowern N.E.B.;Kirkby K.;Collart E.J.H.
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》
35.Investigation of Excimer Laser Annealing of Si using Photoluminescence at Room Temperature

机译：硅的准分子激光退火在室温下的光致发光研究
- 作者：Bourdon H.;Halimaoui A.;Venturini J.;Gonzatti F.;Dutartre D.
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》
36.Characterization of Nickel Silicides Produced by Millisecond Anneals

机译：毫秒退火产生的硅化镍的表征
- 作者：Adams Bruce;Jennings Dean;Ma Kai;Mayur Abhilash J.;Moffatt Steve;Nagy Stephen G;Parihar Vijay
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》
37.Advanced Activation and Deactivation of Arsenic-Implanted Ultra-Shallow Junctions using Flash and Spike + Flash Annealing

机译：使用Flash和Spike + Flash退火技术对砷植入的超浅结进行高级激活和去激活
- 作者：Lerch W.;Paul S.;Niess J.;McCoy S.;Gelpey J.;Bolze D.;Cristiano F.;Severac F.;Fazzini P.F.;Martinez A.;Pichler P.
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》
38.Applied Materials'' Product Portfolio and Roadmap

机译：应用材料公司的产品组合和路线图
- 作者：Hunter Aaron;Zelenko Jeremy;Mani Rajesh
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》
39.Boron Diffusion and Electrical Activation in Pre-Amorphized Si Enriched with Fluorine

机译：富氟预非晶硅中的硼扩散和电活化
- 作者：Impellizzeri G.;Mirabella S.;Grimaldi M. G.;Priolo F.;Giannazzo F.;Raineri V.;Napolitani E.;Carnera A.
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》
40.Defect Generation and Evolution in Laser Processing of Si

机译：硅激光加工中缺陷的产生与演化
- 作者：La Magna A.;Privitera V.;Mannino G.;Fortunato Guglielmo;Cuscuna Massimo;Svensson B. G.;Monakhov E.;Kuitunen K.;Slotte J.;Tuomisto F.
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》
41.Microwave Annealing for Low Temperature Activation of As in Si

机译：微波退火用于硅中砷的低温活化
- 作者：Kowalski Jeff M.;Kowalski Jeff E.;Lojek Bo
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》
42.Strengths, Weaknesses, Opportunities and Threats of the Post-Silicon Technologies

机译：后硅技术的优势，劣势，机会和威胁
- 作者：Coffa S.
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》
43.Atomistic Modeling of Carbon Co-Implants and Rapid Thermal Anneals in Silicon

机译：硅中碳共放大器和快速热退火的原子建模
- 作者：Zographos Nikolas;Martin-Bragado Ignacio
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》
44.Role of Temperature on the Morphology and the Chemical Composition of C-based Nanostructures: From Nanocolumns to Nanotubes

机译：温度对C基纳米结构的形态和化学组成的作用：从纳米柱到纳米管
- 作者：Scalese S.;Scuderi V.;Simone F.;Pennisi A.;Compagnini G.;Privitera V.
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》
45.Excimer Laser Annealing of Ion-Implanted Silicon: Dopant Activation, Diffusion and Defect Formation

机译：离子注入硅的准分子激光退火：掺杂物的活化，扩散和缺陷形成
- 作者：Monakhov E.V.;Svensson B.G.;La Magna A.;Alippi P.;Italia M.;Privitera V.;Fortunato G.;Mariucci L.;Tumisto F.;Kuitunen K.
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》
46.Characterization of nitrided gate oxides under manufacturing conditions

机译：在制造条件下氮化氮化栅氧化物的表征
- 作者：Hayn Regina;Storbeck Olaf
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》
47.Effect of He Induced Nanovoid on B Implanted in Si: The Microscopic Mechanism

机译：氦诱导的纳米空隙对硅中注入硼的影响：微观机理
- 作者：Bruno E.;Mirabella S.;Priolo F.;Giannazzo F.;Raineri V.;Napolitani E.
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》
48.Ultra-Shallow Dopant Diffusion from Pre-Deposited RPCVD Monolayers of Arsenic and Phosphorus

机译：预先沉积的砷和磷的RPCVD单层超浅掺杂扩散
- 作者：Popadic Milos;Nanver Lis K.;Scholtes T.L.M.
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》
49.Control of Source and Drain Extension Phosphorus Profile by Using Carbon Co-Implant

机译：利用碳共注入控制源漏扩展磷剖面
- 作者：Li C. I.;Liu Ron;Chan M.;Hsiao T. F.;Yang C. L.;Tzou S. F.
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》
- Carbon;
- LSA;
- Phosphorous;
- co-implantation;
- ultra shallow junction;
50.The Reflectivity enhancement of Ni/Ag/(Ti or Mo)/Au Ohmic Contact for Flip-Chip Light-Emitting Diode Applications

机译：Ni / Ag /（Ti或Mo）/ Au欧姆接触在倒装芯片发光二极管应用中的反射率增强
- 作者：Chang Liann-Be;Shiue Ching-Chuan;Jeng Ming-Jer
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》
51.Laser Activated Radical Generation in Rapid Thermal Processing

机译：快速热处理中的激光激活自由基生成
- 作者：Eisele Ignaz;ABmuth Andreas;Sulima Torsten
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》
52.Effect of Low Temperature Annealing Prior to Non-melt Laser Annealing in Ultra-shallow Junction Formation

机译：非熔体激光退火之前的低温退火对超浅结形成的影响
- 作者：Fukaya Takumi;Yamada Ryuta;Tanaka Yuki;Matsumoto Satoru;Suzuki Toshiharu;Fuse Gensyu;Kudo Toshio;Sakuragi Susumu
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》
53.Wafer Temperature Measurement and Control During Laser Spike Annealing

机译：激光尖峰退火过程中晶片温度的测量和控制
- 作者：Chen Shaoyin;Hebb Jeff;Jain Amitabh;Shetty Shrinivas;Wang Yun
- 会议名称：《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on》