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Characteristics of Silicon Oxide Gate MOS Capacitors Formed by Rapid Thermal Oxidation and Annealing

机译：快速热氧化和退火形成的氧化硅栅极MOS电容器的特性

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) insulating films have been obtained by rapid thermal oxidation (RTO) and annealing (RTA), using different temperatures of 600, 700, 800 and 960degC for 40s, in oxygen and nitrogen, respectively. Characterization

机译：绝缘膜已通过快速热氧化（RTO）和退火（RTA）获得，分别在氧气和氮气中分别在600、700、800和960℃的温度下使用40s。表征

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《Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on 》|2007年|P.197-202|共6页
会议地点 Cannizzaro CataniaItaly
作者
Cavarsan; F.A.; Toma; A.; Fo; J.G.; Diniz; J.A.; Doi; I.;
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Fourier transform spectra; MOS capacitors; current density; infrared spectra; insulating thin films; leakage currents; oxidation; rapid thermal annealing; silicon compounds; transmission electron microscopy; Fourier transform infrared spectra; SiO; SiO;

机译：傅立叶变换光谱； MOS电容器当前密度;红外光谱绝缘薄膜；漏电流氧化快速热退火；硅化合物;透射电子显微镜傅立叶变换红外光谱； SiO;二氧化硅;

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1. Thermal SiO_2 gated Ge metal-oxide-semiconductor capacitor on Si substrate formed by thin amorphous Ge oxidation and thermal annealing [J] . Yung-Hsien Wu, Jia-Rong Wu, Yuan-Sheng Lin, Applied Physicsletters . 2008 ,第8期

机译：通过薄非晶Ge氧化和热退火形成的Si衬底上的热SiO_2门控Ge金属氧化物半导体电容器
2. The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO/sub 2/ interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing [J] . Wu Y., Lucovsky G. IEEE Transactions on Electron Devices . 2000 ,第7期

机译：通过远程等离子体增强CVD和沉积后快速热退火制备的具有氮化的Si-SiO / sub 2 /界面的超薄氮化硅/氧化物堆叠栅极电介质的PMOSFET的性能和可靠性
3. Shrinking of silicon nanocrystals embedded in an amorphous silicon oxide matrix during rapid thermal annealing in a forming gas atmosphere [J] . van Sebille M., Fusi A., Xie L., Nanotechnology . 2016 ,第36期

机译：在成型气体气氛中快速热退火过程中，嵌入非晶硅氧化物基质中的硅纳米晶体的收缩
4. Characteristics of Silicon Oxide Gate MOS Capacitors Formed by Rapid Thermal Oxidation and Annealing [C] . Cavarsan F.A., Toma A., Fo J. Godoy, International Conference on Advanced Thermal Processing of Semiconductors . 2007

机译：通过快速热氧化和退火形成的氧化硅栅极MOS电容器的特性
5. Technology development and study of rapid thermal CVD high-k gate dielectrics and CVD metal gate electrode for future ULSI MOSFET device integration: Zirconium oxide, and hafnium oxide. [D] . Lee, Choong-Ho. 2003

机译：快速热CVD高k栅极电介质和CVD金属栅电极的技术开发和研究，用于未来的ULSI MOSFET器件集成：氧化锆和氧化ha。
6. Reduced Graphene Oxide Embedded with MQ Silicone Resin Nano-Aggregates for Silicone Rubber Composites with Enhanced Thermal Conductivity and Mechanical Performance [O] . Weijie Liang, Xin Ge, Jianfang Ge, 2018

机译：嵌有MQ硅树脂纳米骨料的还原石墨烯氧化物具有增强的导热性和机械性能可用于硅橡胶复合材料
7. Formation of highlyn‐doped gallium arsenide layers by rapid thermal oxidation followed by rapid thermal annealing of silicon‐capped gallium arsenide [O] . D. K. Sadana, J. P. de Souza, F. Cardone 1991

机译：通过快速热氧化形成高掺杂的砷化镓层，然后通过硅封镓砷化镓快速热退火

Characteristics of Silicon Oxide Gate MOS Capacitors Formed by Rapid Thermal Oxidation and Annealing

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