Highly Reliable Rapid Thermal Selective Gate Re-Oxidation Process of Advanced Metal Gate Stacks with Tungsten Electrode

机译：高度可靠的快速热选择栅极重新氧化工艺，具有钨电极的先进金属栅极堆叠

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Selective rapid thermal oxidation (RTO) is needed to oxidize a tungsten (W) / tungsten nitride (WN) / poly silicon gate structure after gate patterning. Si/SiO₂ and tungsten can coexist in a gas ambient of up to approximately 20% H₂O

机译：选择性快速热氧化（RTO）需要在栅极图案化之后氧化钨（W）/钨（WN）/聚硅栅极结构。 Si / SiO _{2 和钨可以在高达约20％h _{2 o的气体环境中共存}}

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《International Conference on Advanced Thermal Processing of Semiconductors》|2007年||共6页
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Niess J.; Kirchner C.; Dietl W.; Meyer H.-J.; Nadig B.; Lerch W.;
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中图分类 TN305-53;
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MIS structures; elemental semiconductors; oxidation; reflectivity; silicon; tungsten; tungsten compounds; W-WN-Si; W-WN-Si; advanced metal gate stacks; rapid thermal selective gate re-oxidation; secondary ion mass spectroscopy; spectral reflectivity; temp; Interface;

机译：MIS结构;元素半导体;氧化;反射率;硅;钨;钨化合物;W-WN-Si;W-Wn-Si;先进的金属栅极堆叠;快速热选择性栅极重新氧化;二次离子质谱;光谱反射率;温度;界面;

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1. Thermally Unstable Ruthenium Oxide Gate Electrodes in Metal/High-k Gate Stacks [J] . Masaru Kadoshima, Toshio Aminaka, Etsuo Kurosawa, Japanese journal of applied physics . 2008,第4issue1期

机译：金属/高k栅堆叠中的热不稳定氧化钌栅电极
2. Thermal stability of advanced gate stacks consisting of a Ru electrode and Hf-based gate dielectrics for CMOS technology [J] . Machajdik D, Kobzev AP, Husekova K, Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology . 2007,第10期

机译：由Ru电极和基于Hf的CMOS栅极电介质组成的高级栅极堆叠的热稳定性
3. Combinatorial study of Ni-Ti-Pt ternary metal gate electrodes on HfO_2 for the advanced gate stack [J] . K.-S. Chang, M. L. Green, J. Suehle, Applied Physics Letters . 2006,第14期

机译：用于高级栅堆叠的HfO_2上Ni-Ti-Pt三元金属栅电极的组合研究
4. Highly Reliable Rapid Thermal Selective Gate Re-Oxidation Process of Advanced Metal Gate Stacks with Tungsten Electrode [C] . Niess, J., Kirchner, Advanced Thermal Processing of Semiconductors, 2007 15th International Conference on . 2007

机译：先进的钨电极金属栅堆叠的高可靠性快速热选择性栅再氧化工艺
5. Technology development and study of rapid thermal CVD high-k gate dielectrics and CVD metal gate electrode for future ULSI MOSFET device integration: Zirconium oxide, and hafnium oxide. [D] . Lee, Choong-Ho. 2003

机译：快速热CVD高k栅极电介质和CVD金属栅电极的技术开发和研究，用于未来的ULSI MOSFET器件集成：氧化锆和氧化ha。
6. DNA Aptamer-Conjugated Magnetic Graphene Oxide forPathogenic Bacteria Aggregation: Selective and Enhanced PhotothermalTherapy for Effective and Rapid Killing [O] . Muserref A Ocsoy, Sadi Yusufbeyoglu, Nilay Ildiz, 2021

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7. Study on advanced gate stack using high-k dielectric and metal electrode [O] . HWANG WAN SIK 2008

机译：使用高k介电层和金属电极的先进栅堆叠的研究
8. Formation of MOS (Metal Oxide Semiconductor) Gates by Rapid Thermal/Microwave Remote Plasma Multiprocessing [R] . Moslehi, M. M., Saraswat, K. C. 1987

机译：通过快速热/微波远程等离子体多处理形成mOs（金属氧化物半导体）栅极

Highly Reliable Rapid Thermal Selective Gate Re-Oxidation Process of Advanced Metal Gate Stacks with Tungsten Electrode

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