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STRESS-REDUCED POLYMETAL GATE ELECTRODE CAPABLE OF REDUCING MECHANICAL STRESS GENERATED FROM GATE STACK IN POST THERMAL PROCESS AND FABRICATING METHOD THEREOF
STRESS-REDUCED POLYMETAL GATE ELECTRODE CAPABLE OF REDUCING MECHANICAL STRESS GENERATED FROM GATE STACK IN POST THERMAL PROCESS AND FABRICATING METHOD THEREOF
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机译:能够减小后热处理过程中门架产生的机械应力的应力减小的多金属栅电极及其制造方法
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摘要
PURPOSE: A stress-reduced polymetal gate electrode and a fabricating method thereof are provided to improve a refresh characteristic and reliability by implanting ions into a low resistant metal to adjust a thermal expansion coefficient thereof. CONSTITUTION: A gate insulating layer(302) is formed on a semiconductor substrate(301). A gate stack(300) is formed on the gate insulating layer. The gate stack includes a polysilicon layer(303) as a bottom layer, a hardmask insulating layer(307) as a top layer, and a metal layer(305) formed therebetween. The metal layer has a minimum thermal expansion coefficient difference in comparison with the hardmask insulating layer and the polysilicon layer. An ion implantation buffer layer(306) is formed on the metal layer to perform a buffering function in an impurity implantation process.
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