METHOD FOR FORMING SELECTIVE SILICON OXIDE LAYER IN PRESENCE OF TUNGSTEN AND SILICON DURING FABRICATION OF SEMICONDUCTOR DEVICE BY PERFORMING SELECTIVE OXIDATION PROCESSING AFTER DOPING HYDROGEN IN TUNGSTEN GATE ELECTRODE

摘要

PURPOSE: A method for forming a selective silicon oxide layer in the presence of tungsten and silicon during the fabrication of a semiconductor device is provided to restrain abnormal oxidation of tungsten by performing selective silicon oxidation processing after doping hydrogen in a tungsten gate electrode. CONSTITUTION: A gate insulating layer(31) is formed on a silicon substrate(30). A tungsten gate layer(32) is formed on the gate insulating layer. Hydrogen is doped in the tungsten gate layer. A gate electrode is formed by patterning the tungsten gate layer. Then, a selective silicon oxide layer is formed on the silicon substrate by performing oxidation processing.