Clamp mode package diffusion welded power SiC Schottky diodes

摘要

This paper is devoted to the results of a diffusion welding technique applied to solve the problem of packaging for large area SiC Schottky diodes. The forward current-voltage characteristics measured at 75 A measured for packaged diodes yields 250 A/cm{sup}2 (70A) at 1.9 V forward voltage. Reverse recovery time for packaged diodes was in the range of 29-36 ns.