Analysis of SiO_2 Thin Film Deposited by Reactive Sputtering

摘要

SiO_2 layers were deposited by reactive d.c ion sputtering (using 1 keV Ar~+ ion gun) from a high purity silicon target in an oxygen ambient. The base pressure in the deposition chamber was 4.7·10~(-9)mbar, and the substrate temperature was held at 550°C. The argon partial pressure during ion gun operation was 1·10~(-3)mbar. Structural characterization of the films was performed by Rutherford backscattering spectrometry (RBS analysis), electron microprobe analysis, X-ray diffraction (XRD analysis) and Raman spectroscopy. Reactive sputtering proved to be efficient for the deposition of silica at an oxygen partial pressure of 2·10~(-4) mbar and an electrical current on the target of 5.5mA.