Effect of temperature on the electronic structure in n-modulation-doped Al_xGa_((1-x))As/GaAs heterostructure

摘要

We theoretically study the subband structure of n-modulation-doped Al_xGa_((1-x))As/GaAs heterostructure using a self-consistent procedure to solve simultaneously the Schrodinger and Poisson equations. Our results show that the sheet electron concentration can be modified by both increasing the temperature and the spacer thickness. The results also indicate that the energy levels are not prolonged linearly as the temperature increases but show step-like behavior.