Monte Carlo Study of Electronic Transport in Al(1-x)Ga(x)As/GaAs Single-Well Heterostructures

摘要

A study of electronic transport in Al(1-x)Ga(x)As/GaAs single well structures including multisubband conduction at 77 and 300 K has been performed. The electronic states of the quantum well are calculated self consistently taking the five lowest subbands into account. The numerically obtained wave functions and energy levels are used to obtain the major two dimensional scattering rates in each subband. Polar optical and acoustic phonon (via deformation potential) scattering are considered including intersubband transitions. For ionized impurity scattering, the screening effects due to the five lowest subbands are taken into account to obtain the Fourier-transported Coulomb potential. The steady state and transient behavior of the electrons in the well are studied through a Monte Carlo particle simulation. It is shown that high transient velocities ((3-8) x 10 to the 7th power cm/sec) can be expected at low and intermediate fields.