Mixed Oxide High-K Gate Dielectrics - Interface Layer Structure, Breakdown Mechanism, and New Memories

摘要

Mixed metal oxide high-k films have many advantageous dielectric properties over conventional metal oxides. In this paper, three major subjects on the mixed oxide gate stack prepared by the sputtering method, i.e., dopant influence on interface layer structures, double-layer gate stack breakdown mechanism, and new CMOS-type nonvolatile memories based on nanocrystals embedded doped oxide high-k films, are examined and discussed.