Advanced Nano-analysis of a High-k Dielectric Stack

摘要

Analytical electron microscopy techniques are used to investigate elemental distributions across a high-k dielectric stack with a metal gate. Electron energy-loss spectroscopy results from a Si(100)/SiO{sub}2/HfO{sub}2/TiN/a-Si gate stack prior to activation show evidence of interface reactions having occurred with the formation of an oxide layer at the TiN/a-Si interface.