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机译:基于物理气相沉积的原位法制备掺La的Hf-硅酸盐栅电介质及其对金属/高k层的有效功函数的调制
Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;
Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;
Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;
Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;
Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan Research Center for Ultra-Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;
Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;
Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan Research Center for Ultra-Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;
机译:基于物理气相沉积的原位法制备掺La的Hf-硅酸盐栅电介质及其对金属/高k层的有效功函数的调制
机译:稀土金属对n沟道金属氧化物半导体器件应用中的全硅化栅极/高k电介质堆叠的有效功函数调制的作用
机译:TiN / TaN双层堆叠厚度的高k /金属栅极nMOSCAP的有效功函数调整方法
机译:基于PVD的高级金属/高k栅堆叠的原位制造方法的接口工程
机译:通过原子层沉积进行金属栅/高k电介质堆叠工程:材料问题和电性能。
机译:具有纳米堆叠的高k栅极电介质和3D鳍形结构的高性能III-V MOSFET
机译:基于Hf的高K栅极电介质和金属栅极叠层,用于高级CMOS器件