MICORSCOPIC AND SPECTROSCOPIC ANALYSIS OF HIGH—k OXIDE HfO_x FILMS

摘要

High-k oxide materials are most important issues in the current semiconductor technology field. Especially, their integrity for use as a gate oxide should be testified to replace the long-lived silicon dioxide/poly-silicon gate structure. However, most data taken upto-now cannot be easily applied to ultra-thin film on Si or metal in the nano-sized structure because of significant interface effect from reduced dimension. Therefore, we utilized highly surface-sensitive microscopic and spectroscopic tools to investigate promising high-k candidates in the non-destructive manner.