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Analysis of the Optical and Structural Properties of Oxide Films on InP Using Spectroscopic Ellipsometry

机译:光谱椭偏仪分析InP上氧化膜的光学和结构性质

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摘要

The optical properties of oxide films grown on InP with the aid of various procedures are studied using spectroscopic ellipsometry. Methodological approaches and techniques for the interpretation of the results of the ellipsometric measurements are analyzed. It is demonstrated that the films resulting from the oxidation of the structures with the magnetron-sputtered chemostimulator exhibit relatively low absorption, normal dispersion of the refractive index, and sharp interfaces. As distinct from such films, the films that result from the oxidation of InP with active centers created by the explosion of a vanadium wire or deposition of chemostimulator from sol or gel exhibit strong absorption bands over the entire spectral range and substan- tial dispersion of optical properties in the interface regions. The applicability limits for the express diagnostics of the films based on the measurements using a single-wavelength laser ellipsometer are determined.
机译:使用椭圆偏振光谱法研究了借助各种程序在InP上生长的氧化膜的光学特性。分析了用于解释椭偏测量结果的方法学方法和技术。已经证明,用磁控溅射化学热敏化器氧化结构所产生的膜表现出相对低的吸收,折射率的正常分散和清晰的界面。与这种薄膜不同的是,由钒丝爆炸或化学刺激剂从溶胶或凝胶中沉积而形成的具有活性中心的InP氧化所形成的薄膜在整个光谱范围内均具有很强的吸收带,并且在光学上具有很大的色散界面区域中的属性。确定了基于使用单波长激光椭偏仪进行的测量来进行薄膜快速诊断的适用极限。

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