COMPOSITION DEPENDENCE OF PHYSICAL AND ELECTRICAL PROPERTIES OF HfSiON FILMS AS ALTERNATIVE GATE DIELECTRICS

摘要

Detailed investigation of the HfSiON electrical property dependence on Hf and N concentration has been conducted. The electrical property has been correlated with the film physical structure in this study. Increase in Hf and N concentrations enhances the film dielectric constant, especially when Hf-N bonds are formed in the film. The Hf-N formation results in the bandgap narrowing, leading to barrier height reduction at the same time. In view of the figure of merit in terms of the suppression of the direct tunneling leakage current, high Hf and N may be desirable for the application of HfSiON films as alternative gate dielectrics.