Gate dielectric film with controlled structural and physical properties over a large surface area substrate

摘要

An α-SiN_x:H gate dielectric film deposited over a substrate surface having a surface area larger than 100 cm×100 cm, wherein said α-SiN_x:H gate dielectric film exhibits a film thickness which varies by less than about 20% over said surface area, a film density which varies by less than about 17% over said surface area, and wherein said film exhibits a Si—H bonded structure content of less than about 15 atomic % over said surface area.