Surface property controllable multilayered gate dielectric for low voltage organic thin film transistors

摘要

We report the effects of dielectric surface properties on the device performance of organic thin film transistors (OTFTs) using polymer/high-k oxide multilayered gate dielectrics. We systematically controlled the surface energy of the gate dielectric from very hydrophobic to very hydrophilic. The modified dielectric surface strongly affected the initial growth mechanism of pentacene and subsequently the performance of the OTFTs. The performance of the OTFTs with a higher surface energy was superior to that of the OTFTs with a lower surface energy.