首页> 外文会议>International Symposium on Advanced Optical Manufacturing and Testing Technologies >Optical properties and electrochromic performance tungsten trioxide thin films doped with terbium prepared by magnetron sputtering deposition
【24h】

Optical properties and electrochromic performance tungsten trioxide thin films doped with terbium prepared by magnetron sputtering deposition

机译:用磁控溅射沉积制备的三氧化钨掺杂铽的光学性质和电致变色性能掺杂铽

获取原文

摘要

In this work, electrochromic tungsten oxide thin films doped with terbium were deposited by radio frequency magnetron sputtering deposition. The samples were analyzed with scanning electron microscopy (SEM), atomic force microscopy (AFM) and x-ray diffraction (XRD). The films were amorphous and the thickness of the films is about 250 nm. From the result of AFM, the WO3 films doped with terbium are porous and the sample doped with 1.95% Tb has more porosities than undoped sample. Cyclic voltammetry experiments were performed to investigate the influence of terbium content on the electrochromic performance of the films. When the terbium content is equal to 1.95%, the cell capacity owns the best electrochromic capability. Measurement of optical transmission measurement for W-Tb-O thin films was carried out by a double-beam UV-VIS-NIR spectrophotometer with a wavelength range from 380 nm to 900 nm. In the different wavelength ranges, the films have different transmittance changes for the bleaching and colored state.
机译:在这项工作中,通过射频磁控溅射沉积沉积掺杂有铽的电致变色氧化钨薄膜。用扫描电子显微镜(SEM),原子力显微镜(AFM)和X射线衍射(XRD)分析样品。薄膜是无定形的,膜的厚度为约250nm。从AFM的结果,掺杂有铽的WO3薄膜是多孔的,并且掺杂有1.95%TB的样品具有比未掺杂的样品更多的孔隙率。进行循环伏安法实验以研究铽含量对薄膜电致变色性能的影响。当铽含量等于1.95%时,电池容量具有最佳的电致变色能力。 W-TB-O薄膜的光学传输测量的测量由双束UV-Vis-Nir分光光度计进行,波长范围为380nm至900nm。在不同的波长范围内,薄膜对漂白和着色状态具有不同的透射率变化。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号