Performance of write-line inserted magnetic tunneling junction for low-write-current magnetic random access memory cell

摘要

We have developed a write-line-inserted magnetic tunneling junction (MTJ) (WLIM) for use in low-write-current magnetoresistance random access memory (MRAM). The write current of the WLIM was reduced to 0.98 mA and its thermal stability factor was 85 for a 0.32 X 0.48 mu m~2 MTJ. We evaluated the switching property of the WLIM in an external magnetic field (H_(sw_ext)) and an internal magnetic field (H_(sw_int)). We found that H_(sw_ext) was larger than H_(sw_int) when the aspect ratio of the MTJs was less than 1.5. Furthermore, we obtained a high write-current magnetic-field efficiency of 13.0 Oe/mA when the aspect ratio of the MTJs was low. These properties mean that the WLIM structure has advantages for use in low-write-current MRAM.