Performance of write-line inserted magnetic tunneling junction for low-write-current magnetic random access memory cell

摘要

We have developed a write-line-inserted magnetic tunneling junction (MTJ) (WLIM) for use in low-write-current magnetoresistance random access memory (MRAM). The write current of the WLIM was reduced to 0.98 mA and its thermal stability factor was 85 for a