Vertical correlation-anticorrelation transition in InAs/GaAs quantum dot structures grown by molecular beam epitaxy

摘要

This paper shows the first experimental evidence of anticorrelated InAs/GaAs quantum dot structures grown by molecular beam epitaxy. As previous authors have predicted theoretically, a transition occurs between correlated and anticorrelated vertical arrangements depending on the ratio between the layer separation and the average spacing between quantum dots in a single plane. These vertically anticorrelated quantum dot systems are observed to be an efficient way to keep the size and density of the islands constant, which is of crucial importance for the optoelectronic applications of these heterostructures.