首页> 外文会议>International Conference on Solid-State Sensors, Actuators and Microsystems >TEMPERATURE-DEPENDENT FRACTURE TOUGHNESS OF SINGLE-CRYSTAL-SILICON FILM
【24h】

TEMPERATURE-DEPENDENT FRACTURE TOUGHNESS OF SINGLE-CRYSTAL-SILICON FILM

机译:单晶硅膜的温度依赖性断裂韧性

获取原文

摘要

We evaluated the fracture toughness of micron-sized single-crystal-silicon film at temperatures ranging from 293 K to 773 K by using the "on-chip" tensile testing method. We made a 1-μm-long notch on one side of a thin film specimen by using focused ion beam (FIB) process. The fracture toughness was 1.29 MPam{sup}(1/2) at room temperature. It rapidly increased at 353 K, reaching almost double that at room temperature and then saturated at higher temperatures. A few specimens tested at 423 K and 573 K showed a non-linear relationship between stress and strain due to plastic deformation around the notch.
机译:我们通过使用“片上”拉伸试验方法,评估从293k至773k的温度的微米尺寸单晶体 - 硅膜的断裂韧性。我们通过使用聚焦离子束(FIB)工艺在薄膜样本的一侧制造了1μm长的凹口。在室温下,断裂韧性为1.29mPam {sup}(1/2)。它在353 k迅速增加,在室温下几乎达到两倍,然后在较高温度下饱和。在423 k和573k下测试的一些样品显示出由于凹口周围的塑性变形而导致的应力和应变之间的非线性关系。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号