High Temperature Contacts to GaN adn SiC Based on TiB_x Nanostructure Layers

摘要

In this communication we present the results of study of new contact systems to GaN epitaxial layers grown on sapphire and n-type 6H-SiC monocrystals. The TiB_x nanostructure phase has been used during manufacturing Ti -Al -TiB_x -Au and TiB_x contact systems. The n-GaN epitaxial layers of 1 mum thickness were grown on [0001] sapphire substrate by vapor-phase epitaxy. The n-type 6H-SiC monocrystals were grown by Lely method with the donor concentration of 2Xl0~(18) cm~3. The layers of Ti, Al, TiB_x and Au were deposited by magnetron sputtering followed by high-temperature annealing.