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A Monolithic 500 °C D-Flip Flop Realized in Bipolar 4H-SiC TTL Technology

机译:在双极4H-SiC TTL技术中实现的单片500°C D-翻转牌

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This work presents the design, in-house fabrication, and electrical characterization of a monolithic medium scale integrated (MSI) D-type flip-flop (DFF). It consists of 65 n-p-n bipolar transistors and 49 integrated resistors. The monolithic bipolar DFF is realized using basic gates by employing the structured way of implementation, whereas the basic gates are implemented by employing the conventional transistor-transistor logic (TTL). The positive-edge-triggered DFF, with synchronous active-low reset, is characterized in the temperature range of 25-500 °C. The circuit has been tested in two modes of operation. Data input mode, and clock divider. Non-monotonous temperature dependence is observed for the flip-flop propagation-delay clock-to-output (tpcq), rise-time and fall-time. The dynamic parameters initially decrease with the temperature in the range 25 °C to 300 °C and then increase in the range 300 °C to 500 °C. The transient response has also been measured at a clock frequency of 100 kHz. At T = 400 °C and Vcc = 15 V, the DFF consumes minimum energy ~ 234 nJ.
机译:这项工作介绍了整体(MSI)D型触发器(DFF)的单片介质尺度的设计,内部制造和电学特性。它由65 n-p-n双极晶体管和49个集成电阻组成。通过采用结构化的实施方式,使用基本门来实现单片双极DFF,而基本栅极通过采用传统的晶体管晶体管逻辑(TTL)来实现。具有同步有功率低复位的正边缘触发的DFF的特征在于25-500°C的温度范围。该电路已以两种操作模式进行了测试。数据输入模式和时钟分频器。观察到触发器传播延迟时钟输出(TPCQ),上升时间和跌向时间的非单调温度依赖性。动态参数最初在25°C至300℃的范围内的温度下降,然后将300°C至500°C的范围增加。瞬态响应也以100kHz的时钟频率测量。在T = 400°C和VCC = 15 V时,DFF消耗最小能量〜234 NJ。

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