Cold Split Kerf-Free Wafering Results for Doped 4H-SiC Boules

摘要

We report on the results of intense third party evaluation of the COLD SPLIT technology. In total nine different SiC manufactures supplied test material. The results confirm the tremendous potential of the technology with total kerf losses per wafer of less than 100μm. Furthermore, our general approach led to comparable results for all vendors. The vendor specific difference like lateral doping level were addressed via control loops in our lasering process. These loops take crystal properties into account and adjust the applied laser energy and the depth of the laser process accordingly. Even the current best case results of sub 80μm split loss per wafer are dominated by systematic effects, which are addressed by continuous improvement efforts.