NEGATIVE BIAS-TEMPERATURE INSTABILITY ON 90NM DECOUPLED PLASMA NITRIDATION OXYNITRIDE GATE CMOSFETS

摘要

Negative Bias-Temperature Instability (NBTI) effects were investigated on pMOSFET with Decoupled Plasma Nitridation (DPN) Oxynitride gate and with conventional SiCh gate. The Idsat and Vu, degradations show that DPN process has a little side effect on the pMOSFETs device performance under bias temperature stress. The extrapolated operation voltages for 10 years lifetime, at failure criteria of 15% AVt under 10.7MV/cm and 125°C stress, is 1.16V for DPN pMOSFETs. It can meet the required 1.0 V operation voltage with safety margin.