TEMPERATURE INFLUENCES ON THE DRAIN LEAKAGE CURRENT BEHAVIOR IN GRADED-CHANNEL SOI nMOSFETS

摘要

Experimental and simulations analyzes were done in Graded-Channel ( GC ) SOI nMOSFETs in order to study the drain leakage current behavior in these devices when operating from room temperature ( 300K ) up to 573K. It was noticed that drain leakage current depends strongly on the ratio between the length of the lowly doped region and the mask channel length. All discussions presented are based on experimental and numerical bidimensional simulations results.