Leakage Drain Current Behavior in an Accumulation Mode SOI p-Channel MOSFET Operating at High Temperatures

摘要

This paper reports the leakage drain currentbehavior in an accumulation mode silicon-on-insulator (SOI) p-channel metal oxide semiconductor field effect transistor(MOSFET) device operating at high temperatures in function ofthe back gate voltage. It was observed experimentally that theleakage drain current decreases when the back gate bias increasefor devices operating up to 300℃. Numerical simulations werealso used to support this work.