Study of the leakage drain current components in accumulation-mode soi pMOSFETs at high-temperatures

摘要

In this work the study of the leadage drain current components in Accumulation-Mode SOI pMOSFETs operating at high-temperatures is presented. The proposed analyses is based on experimental leakage drain current measurements for the device operating from room up to 300 deg C as a function of the back gate bias. It is observed that in SOI pMOSFET the leakage drain current that flows through the silicon film is composed not only by holes but also by electrons when the device is operating at hightemperatures. The results are observed experimentally and supported by MEDICI numerical bidimensional simulations.