SUB-MICRON SURFACE TEXTURING OF MONOCRYSTALLINE SILICON THIN FILM SOLAR CELLS USING REACTIVE ION ETCHING METHOD

摘要

We present the texturing for the high efficiency monocrystalline silicon (c-Si) thin film solar cells. Effective light trapping is the key issue to realize high efficiency thin (< 10μm ) film c-Si cell. We fabeicated sub-micron surface textruing using a reactive ion etching method (RIE). Sub-micron needle pyramids made by RIE were found to decrease the reflectivity in the active wavelength region for crystalline Si, and the maximum efficiency of 11.26% was obtained in 10 μm thick c-Si cell with SiN. Junction formation on textured surface was investigated in detail. Internal Quantum Efficiency (IQE) analyses in cell performance revealed that shallow junctions fabricated by the gas phase diffusion technique was promising. Further an optimization of condition in diffusion and passivation by SiN deposition will be needed for Submicron needle pyramids.