Liquid-phase epitaxy of solid solutions (Sn_2)_x(InSb)_(1-x) on GaAs substrate.

摘要

Method liquid phase epitaxy from of a solution of a melt the solid solution (Sn_2)_x(InSb)_(1-x) is brought up, and also the heterostructures nGaAs-p(Sn)_x(InSb)_(1-x) are obtained. By a method of an X-ray diffraction is shown that, obtained of a film have a high enough monocrystallinity. The measuring have shown, that obtained nGaAs-p(Sn)_x(InSb)_(1-x) the structures have responsively in an 5-1 microns interval. Breadth of a forbidden region of a solid solution (Sn_2)_x(InSb)_(1-x) evaluated which has made E_g ~ 0,11-0,12 eV.