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QD geometry and electrical characteristics of Al/Si/sub 1-x/Ge/sub x//n-Si/Al heterodiodes with different crystalline orientations of Si/sub 1-x/Ge/sub x/ layers

机译：QD几何形状和Al / Si / sub 1-x / ge / sub x // n-si / al异二极管具有不同晶体取向的Si / sub 1-x / ge / sub x /图层的不同晶体取向

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Specific features of room-temperature I-V and C-V curves of Al/Si/sub 1-x/Ge/sub x//n-Si/Al structures with x = 0.1 - 0.3 and different crystalline orientations of the Si/sub 1-x/Ge/sub x/ layers are studied experimentally and attributed to influence of quantum confinement effect.

机译：室温IV的特定特征和Al / Si / sub 1-x / ge / sub x // n-si / al结构的CV曲线，具有x = 0.1-0.3和Si / sub 1-x的不同晶体取向/ GE / Sub X /层进行实验研究并归因于量子限制效应的影响。

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《IEEE International Conference on Group IV Photonics》|2004年||共3页
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Ligatchev V.; Wong T.K.S.;
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中图分类自动化技术、计算机技术;
关键词
semiconductor quantum dots; aluminium; Ge-Si alloys; silicon; semiconductor heterojunctions; semiconductor diodes; crystal orientation; surface morphology; quantum dot geometry; electrical characteristics; Al/Si/sub 1-x/Ge/sub x//n-Si/Al heterodiodes; crystalline orientations; Si/sub 1-x/Ge/sub x/ layers; room-temperature; quantum confinement effect; surface morphology; 20 degC; Al-Si/sub 1-x/Ge/sub x/-Si-Al;

机译：半导体量子点;铝;Ge-Si合金;硅;半导体异电结合;半导体二极管;晶体取向;表面形态;量子点几何;电特性;Al / Si / Sub 1-X / Ge / Sub x // n-si / Al异二极管;结晶取向;Si / sub 1-x / ge / sub x /层;室温;量子监禁效果;表面形态;20 degc;al-si / sub 1-x / ge / sub x / - Si-al.;

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专利

1. Germanium-induced texture and preferential orientation of NiSi_(1-x)Ge_x layers on Si_(1-x)Ge_x [J] . T. Jarmar, Z.-B. Zhang, J. Seger, Physical review. B, Condensed Matter And Materals Physics . 2004,第23期

机译：锗诱导的Si_（1-x）Ge_x上NiSi_（1-x）Ge_x层的织构和优先取向
2. Influence of Ge substrate orientation on crystalline structures of Ge_(1-x)Sn_x epitaxial layers [J] . Takanori Asano, Shohei Kidowaki, Masashi Kurosawa, Thin Solid Films . 2014,第apra30期

机译：Ge衬底取向对Ge_（1-x）Sn_x外延层晶体结构的影响
3. Growth and electrical properties of in situ Sb-doped Ge_(1-x)Sn_x epitaxial layers for source/drain stressor of strained-Ge transistors [J] . Jeon Jihee, Suzuki Akihiro, Takahashi Kouta, Japanese journal of applied physics . 2018,第12期

机译：应变Ge晶体管的源/漏应力源Sb掺杂Ge_（1-x）Sn_x外延层的生长和电性能
4. QD geometry and electrical characteristics of Al/Si/sub 1-x/Ge/sub x//n-Si/Al heterodiodes with different crystalline orientations of Si/sub 1-x/Ge/sub x/ layers [C] . Ligatchev V., Wong T.K.S. IEEE International Conference on Group IV Photonics . 2004

机译：QD几何形状和Al / Si / sub 1-x / ge / sub x // n-si / al异二极管具有不同晶体取向的Si / sub 1-x / ge / sub x /图层的不同晶体取向
5. Microstructure and electrical properties of MOCVD-derived perovskite lead zirconium(x) titanium(1-x) oxygen(3) and lead (scandium tantalum)(1-x) titanium(x) oxygen(3) thin films on lanthanum nickel oxide electrode-buffered silicon [D] . Lin, Chun-hsiung 2000

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6. Synthesis Characterization and Application of Iron(II) Doped Copper Ferrites (CuII(x)FeII(1-x)FeIII2O4) as Novel Heterogeneous Photo-Fenton Catalysts [O] . Asfandyar Khan, Zsolt Valicsek, Ottó Horváth 2020

机译：铁（II）掺杂铜铁氧体（CuII（x）FeII（1-x）FeIII2O4）的合成表征及应用
7. Electronic band structures of Si$_{1-x}$Ge$_x$, Si$_{1-x}$Sn$_x$ and Ge$_{1-x}$Sn$_x$semiconductor alloys [O] . P.M. Yakibchuk, O.V. Bovgyra, M.V. Kovalenko, 2020

机译：Si $ _ {1-x} $ GE $ _X $，SI $ _ {1-x} $ SN $ _ $和GE $ _ {1-x} $ SN $ _ $ $半导体合金
8. Strategies for Direct Monolithic Integration of AlxGa(1-x)As/InxGa(1-x) As LEDS and Lasers On Ge/GeSi/Si Substrates Via Relaxed Graded GexSi(1-x) Buffer Layers. [R] . Groenert, M. E., Leitz, C. W., Pitera, A. J., 2002

机译：通过弛豫渐变Gexsi（1-x）缓冲层在Ge / Gesi / si衬底上直接单片集成alxGa（1-x）as / InxGa（1-x）as LED和激光器的策略。

QD geometry and electrical characteristics of Al/Si/sub 1-x/Ge/sub x//n-Si/Al heterodiodes with different crystalline orientations of Si/sub 1-x/Ge/sub x/ layers

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