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机译:Ge衬底取向对Ge_(1-x)Sn_x外延层晶体结构的影响
Department of Crystalline Materials Science, Graduate School of Engineering Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;
Department of Crystalline Materials Science, Graduate School of Engineering Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;
Department of Crystalline Materials Science, Graduate School of Engineering Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan,Research Fellow of the Japan Society for the Promotion of Science, Japan;
Department of Crystalline Materials Science, Graduate School of Engineering Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;
Department of Crystalline Materials Science, Graduate School of Engineering Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;
Department of Crystalline Materials Science, Graduate School of Engineering Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;
Germanium; Tin; Epitaxial growth; Strain relaxation; Ge(111); Ge(110);
机译:Sn的掺入和生长温度对在Ge(110)衬底上异质外延生长的Ge_(1-x)Sn_x层结晶度的影响
机译:在Ge(110)衬底上形成高质量的Ge_(1-x)Sn_x层,并在Ge_(1-x)Sn_x / Ge界面处以应变诱导的方式限制了层错
机译:Ge(l10)衬底上Ge_(1-x)Sn_x层的外延生长和各向异性应变弛豫
机译:MOCVD法在Ge衬底上外延生长Ge_(1-x)Sn_x
机译:欧姆金属和氧化物沉积对碳化硅衬底上多层外延石墨烯的结构和电性能的影响。
机译:在全氧化物器件的钙钛矿衬底上外延生长高结晶尖晶石铁氧体薄膜
机译:通过人工生产的表面浮雕结构在无定形基底上取向结晶覆盖层。