Effect of the Electron and Hole Scattering Potentials Compensation on Optical Band Edge of Heavily Doped GaAs/AlGaAs Superlattices

摘要

The optical broadenings studied by the photoluminescence in the intentionally disordered GaAs/AlGaAs superlattices were compared with the broadenings of the individual electron states measured by the Shubnikov-de Haas oscillations. It was shown that the combined effect of the electron and hole energy blurrings is to decrease the optical broadening with respect to the individual state broadenings resulting in very sharp optical edges even in highly disordered superlattices.