Theory of Raman Lasing due to Coupled Intersubband Plasmon-Phonon Modes in Asymmetric Coupled Double Quantum Wells

摘要

A theory of Raman laser gain due to coupled intersubband (ISB) plasmon-optical phonon modes in asymmetric coupled double quantum wells (ACDQWs) is presented. Based on the charge-density-excitations (CDE) mechanism, we take into account the electron-electron and electron-phonon (confined LO phonon and interface (IF) phonons) interactions in the scattering cross-section. For Al0.35Ga0.65As/GaAs ACDQWs the calculated coupled mode energies which are responsible for the lasing Stokes emission are well consistent with recent experiments.