Effects of Oxygen Contents in the Active Channel Layer on Electrical Characteristics of IGZO-Based Thin Film Transistors

摘要

The authors report the fabrication of high performance a-IGZO thin film transistors (TFTs) with polymer gate dielectric prepared by spin-coating on a glass substrate. It was found that transmittance of the deposited polymer film was larger than 90percent at 600 nm. It was also found that the a-IGZO TFT prepared with 0.14percent oxygen partial pressure with annealing could provide us a higher mobility (i.e., 17.5 cm~(2)/Vs) while maintaining good substrate swing and good I_(on)/I_(off).