THIN FILM TRANSISTOR, A METHOD FOR MANUFACTURING THE SAME, AND A DISPLAY DEVICE USING THE SAME, CAPABLE OF REDUCING NON-UNIFORMITY OF A TRANSISTOR CHARACTERISTIC USING A CRYSTALLIZED SEMICONDUCTOR LAYER IN A CHANNEL REGION

摘要

PURPOSE: A thin film transistor, a method for manufacturing the same, and a display device using the same are provided to suppress distribution of a transistor characteristic by reducing the influence of crystalline deterioration in an end of a gate electrode in a source side by performing crystallization in a channel region.;CONSTITUTION: A thin film transistor(1) includes a gate electrode(11), a crystallized semiconductor layer(13), a drain electrode and a source electrode. The crystallized semiconductor layer is formed while interposing a gate insulation layer(12) on the gate electrode. The drain electrode and the source electrode are formed in both sides of the crystallized semiconductor layer while interposing the impurity doped layer in contact with the crystallized semiconductor layer. A source side length is longer than a drain side length and the source side contact length is longer than the drain side contact length.;COPYRIGHT KIPO 2010