Low Phase Noise MMIC VCOs for Ka-Band Applications with improved GalnP/GaAs-HBT Technology

摘要

We report on technology and performance of fully monolithic coplanar voltage-controlled oscillators (VCOs) with GalnP/GaAs-HBTs as the active device. With our optimized HBT process the parasitic base resistance R{sub}B and extrinsic base-collector capacitance C{sub}(EX) are significantly reduced. In this way, the maximum frequency of oscillation F{sub}(MAX) is increased from 100 to 170 GHz. This allows to realize fundamental 38 GHz-VCOs with very low phase noise. At an oscillation frequency F{sub}(RES) = 34.2 ± 0.2 GHz, the VCO reaches phase noise levels of-87 dBc/Hz @ 100 kHz and -108 dBc/Hz @ 1 MHz offset frequency, respectively. To our knowledge, these phase noise values are the lowest GaAs data for Ka-band applications reported so far.